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| NTE2966 MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: D Motor Control D Lamp Control D Solenoid Control D DC-DC Converter Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate-Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A Avalanche Drain Current (Pulsed, L = 100H), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Source Current, IS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Channel-to-Case, Rth(ch-c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83C/W Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source ON Resistance Drain-Source On-State Voltage Forward Transfer Admittance Symbol Test Conditions VGS = 20V, VDS = 0V VDS = 60V, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 35A VGS = 10V, ID = 35A VGS = 10V, ID = 35A Min 60 - - 2.0 - - 50 Typ - - - 3.0 5.7 Max - 0.1 0.1 4.0 7.5 Unit V A mA V m V S V(BR)DSS VDS = 0V, ID = 1mA IGSS IDSS VGS(th) RDS(on) VDS(on) |yfs| 0.200 0.263 70 - Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified) Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Symbol Ciss Coss Crss td(on) tr td(off) tf VSD trr IS = 35A, VGS = 0V IS = 70A, dIF/dt = 100A/s VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50 Test Conditions VGS = 0V, VDS = 10V, f = 1MHz Min - - - - - - - - - Typ 6540 1640 790 95 195 290 210 1.0 85 Max - - - - - - - 1.5 - Unit pF pF pF ns ns ns ns V ns .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47) |
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